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Features
* Data Rate up to 50 MHz (2 Outputs at 25 MHz Each) * Pixel Size: 10 m x 10 m (10 m Pitch) * 300 to 1100 nm Spectral Range * High Sensitivity and Lag-free Photodiodes * Very Low Noise (30 pJ/cm2 Noise Equivalent Illumination) * Antiblooming * Exposure Control * 20-lead 0.4" DIL Package * Electrical, Mechanical and Optical Compatibility Between the Two Products The TH7813 and TH7814 linear arrays are based on Atmel's most recent know-how in terms of design and technology. Flexibility and performance of these devices give the opportunity to use them in most vision systems for industrial applications (web inspection, process control, sorting and inspection of various parts), document scanning up to 200 dpi, metrology, etc.
50 MHz 1024/2048 Linear CCDs TH7813A TH7814A
Pin Identification
All pins must be connected
Pin Number 4, 17 3, 18 5 20 2 14 13 15 10 7 8 11 1, 6, 9, 12, 16, 19 Symbol VDD1,2 VOS1,2 VS VDR VGS L1 L2 R A VA VST P VSS Function Output Amplifiers Drain Supply Video Outputs Output Amplifiers Substrate Bias Reset Drain Supply Output Gate Bias Readout Register Clocks Reset Clock Antiblooming Gate Bias/Clock Antiblooming Drain Bias Storage Gate Bias Transfer Gate Clock Ground, Optical Shield Grounding (Internally Connected)
VSS VGS VOS1 VDD1 VS VSS VA VST VSS A
1 20 2 19 3 18 4 17 5 TH7813A 16 6 TH7814A 15 7 14 8 13 9 12 10 11
VDR VSS VOS2 VDD2 VSS R L1 L2 VSS P
Rev. 1990A-IMAGE-05/02
1
Absolute Maximum Ratings*
Storage Temperature Range ......................... -55C to +150C Operating Temperature Range........................ -40C to +85C Thermal Cycling..........................................................15C/mn Maximum Applied Voltages: * Pin: 2, 8, 10, 11, 13, 14, 15 .................................. -0.3 to 15V * Pin: 4, 5, 7, 17, 20 ................................................ -0.3 to 16V * Pin: 1, 6, 9, 12, 16, 19 .........................................0V (ground) Note: Operating range defines the limits within which the functionality is guaranteed. Electrical limits of applied signals are given in operating conditions section. *NOTICE: Stresses above those listed under absolute maximum ratings may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.
Operating Precautions Operating Conditions
Table 1. DC Characteristics
Shorting the video outputs to any other pin, even temporarily, can permanently damage the on-chip output amplifier.
Value Parameter Output Amplifier Drain Supply Storage Gate Bias Antiblooming Gate (See Pixel Saturation Adjustment) Reset Bias Antiblooming Diode Bias Symbol VDD1, VDD2 VST A VDR VA Min 14.5 2.2 2 13.5 14.5 Typ 15 2.4 4 14 15 Max 15.5 2.6 7 14.5 15.5 Unit V V V V V
2
TH7813A/TH7814A
1990A-IMAGE-05/02
TH7813A/TH7814A
Table 1. DC Characteristics (Continued)
Value Parameter Register Output Gate Bias Output Amplifier Source Supply Ground Symbol VGS VS VSS Min 2.2 Typ 2.4 0 0 Max 2.6 Unit V V
Table 2. Drive Clocks Characteristics
Value Parameter Reset gate High level Low level Transfer gate High level Low level Readout register clocks Hilgh level Low level Maximum readout register frequency L1, 2 8.5 -0.1 FH 9 0 10 P 8.5 -0.1 9 0 Symbol R 8.5 -0.1 9 0 9.5 0.4 9.5 0.4 9.5 0.4 V V V V see Figure 1 and Figure 2 V V MHz Clock Capacitance < 25 pF Clock Capacitance < 100 pF Min. Typ. Max. Unit Remark
25
Figure 1. Readout Register Clocks Capacitance TH7813
L1 120 pF 50 pF L2 140 pF
Figure 2. Readout Register Clocks Capacitance TH7814
L1 230 pF 100 pF L2 230 pF
3
1990A-IMAGE-05/02
Timing Diagrams
The following diagram shows the general clocking scheme for the TH7813A and TH7814A. The line is composed as follows:
Number of Prescan Pixels Per Output 4 4 Number of Useful Pixels Per Output 512 1024 Total Number of Pixels Per Output 516 1028
Synopsis TH7813A TH7814A
Postscan elements may be added in order to either increase the exposure time, or to provide a voltage reference level. Figure 3. Line Timing Diagram
Line Period A P L1 L2 R
Transfer Period
The following diagram shows the timing for the transfer period: Figure 4. Line Transfer Period
> 300 ns
> 10 ns A P L1 L2 R
(700 ns typ.) > 10 ns
first prescan pixel
R clock may also be held in high state during line transfer period. The following diagram shows the detailed timing for the pixel readout:
4
TH7813A/TH7814A
1990A-IMAGE-05/02
TH7813A/TH7814A
Figure 5. Pixel Readout Timing Diagram
Tpixel
90%
L1
tr
10%
90%
Duty cycle: 50% 10% Crossover at 50% 10% Rise and fall time 10 ns
L2 0 ns
50%
tf
10%
R
Rise and fall time
8 ns
10 ns
floating diode level Reset Feedthrough
Video outputs are synchronous Video signal occurs on L2 falling edge
Offset in darkness Video signal VIDEO OUTPUTS
First useful pixel occurs on 5th falling edge of L2 after P
Exposure Time Reduction
Antiblooming Gate High Level Low Level Pulse Min. Note: A
The antiblooming structure of the TH7813A and TH7814A provides an electronic shutter capability by clocking phase fA during the line period. The timing diagram is described below:
Min 8.5 2 200 Typ 9 4 Max 9.5 7 Unit V V ns Clock Capacitance (see note) Low Level Sets Saturation Level See Pixel Saturation Adjustment
Clock capacitance: TH7813A = 50 pF, TH7814A = 100 pF
5
1990A-IMAGE-05/02
Figure 6. Exposure Time Reduction
Line Period A P L1 L2 R Transfer Period 100 ns exposure time
Electro-optical Performance
*
General test conditions:
TCASE = 25C Light source: 2854K with 2 mm BG38 filter (unless specified) + F/11 optical aperture. Typical operating conditions: 2 x 10 MHz All values are referred to prescan pixels level.
Value
Parameter Saturation Output Voltage Responsivity Responsivity Unbalance Photo Response Non Uniformity Peak-to-peak Dark Signal Dark Signal Non Uniformity (1) Temporal RMS Noise in Darkness Dynamic Range CTF LAG Charge Transfer Inefficiency (per stage)
Symbol VSAT R
Min 1.65 7.5
Typ 2 8.5 2
Max 3
Unit V V/J/cm2
Remarks
5 10 0.4 0.1
% %VOS mV/ms mV/ms V VOS = 50 mV to 1.5V
PRNU DS DSNU VN DR CTF LAG HCTI 5,500
5 0.1
300 6,600 65 1 8.10
-5
% %
6
TH7813A/TH7814A
1990A-IMAGE-05/02
TH7813A/TH7814A
Static And Dynamic Electrical Characteristics
Value Parameter Output Amplifier Supply Current Output Impedance DC Output Level Output Conversion Factor Offset in Darkness Reset Feedthrough Symbol IDD ZS VREF CVF DC off Vft 200 Min Typ 10 225 10 5 30 400 259 Max Unit mA V V/emV mV Remarks per amplifier
Electro-optical Performances without Infrared Cutoff Filter
Parameter
The TH7813A and TH7814A special semiconductor process enables to exploit the silicon's high near infrared sensitivity while maintaining good imaging performances in terms of response uniformity and resolution. Typical changes in performance with and without IR filtering are summarized below:
With IR Cut-off Filter VOS 5% 65%
Without IR Cut-off Filter 6 x VOS 5% 49%
Average Video Signal Due to a Given Illumination PRNU (Single Defects Excluded) CTF at Nyquist Frequency
Pixel Saturation Adjustment
The TH7813A and TH7814A antiblooming structure can be used to adjust the maximum saturation voltage, by adjusting the A bias voltage. The following curve shows the relation between VSAT and VA.
Figure 7. Pixel Saturation vs. Antiblooming Bias (Typical Conditions)
Typical conditions
3
Saturation Voltage (V)
2
1
0 2 3 4 (V) 5 6 7
Antiblooming Bias
7
1990A-IMAGE-05/02
Spectral Responsivity
Figure 8. Spectral Responsivity
The following curve shows the typical responsivity for TH7813A and TH7814A.
12 10 8 6 4 2 0 200
Responsivity (V/J/cm2)
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
8
TH7813A/TH7814A
1990A-IMAGE-05/02
TH7813A/TH7814A
Package Drawing
Both devices have the same optical center
3 Z = 1.610.30 0.90.1
4 Z = 2.010.30
Notes:
1. 2. 3. 4. 5.
Window Photosensitive area Optical distance between external face of window and photosensitive area Optical distance between backside of package and photosensitive area First pixel position (mm):
TH7813A X = 9.6 0.4 Y = 5.2 0.35
TH7814A X = 4.5 0.4 Y = 5.2 0.35
Ordering Code
TH7813ACC TH7814ACC
9
1990A-IMAGE-05/02
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(c) Atmel Corporation 2002. Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. ATMEL (R) is the registered trademarks of Atmel. Other terms and product names may be the trademarks of others. Printed on recycled paper.
1990A-IMAGE-05/02 0M

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